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Published in 2021 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2021.3071399
Abstract: This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary…
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Keywords:
different cmos;
cmos ics;
high temperatures;
effect ... See more keywords