Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example
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DOI: 10.3390/ma15020457
Abstract: The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. Two types of the most advanced commercial trench products,… read more here.
Keywords: trench gate; different device; avalanche; device ... See more keywords