Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material
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DOI: 10.14429/dsj.70.16360
Abstract: In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used… read more here.
Keywords: passivation; gan high; electron mobility; high electron ... See more keywords