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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2654481
Abstract: The reliability of GaN high-electron-mobility transistors remains limited by trapping, and a new way to characterize traps is through the drain current transient. In this paper, we report a differential amplitude spectrum (DAS) from which…
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Keywords:
amplitude spectrum;
differential amplitude;
trapping effect;
current transient ... See more keywords