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Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202110454
Abstract: A reliable method for preparing a conformal amorphous carbon (a-C) layer with a thickness of 1-nm-level, was tested as a possible Cu diffusion barrier layer for next-generation ultrahigh density semiconductor device miniaturization. A polystyrene brush…
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Keywords:
next generation;
amorphous carbon;
diffusion;
barrier ... See more keywords
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Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900314
Abstract: The epoch of flexible electronics demands new measures to interconnect electronic components and circuits under mechanical deformations such as bending, rolling, folding, and even stretching. Although liquid metal has been proposed as an alternative to…
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Keywords:
metal;
liquid metal;
diffusion barrier;
solution ... See more keywords
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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.02.245
Abstract: Abstract Arc ion plated-NiCrO interlayer was fabricated as an active diffusion barrier for microcrystalline β-NiAl coating on Ni-base single crystal Rene N5 superalloy. The effects of the NiCrO barrier layer on the cyclic oxidation behavior…
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Keywords:
barrier;
oxidation;
diffusion barrier;
nial coating ... See more keywords
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Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.01.139
Abstract: Abstract (La0.4Ce0.6O2-δ)0.96(FeO1.5)0.04 ((LCO)0.96(FeO1.5)0.04) and Y0.08Zr0.92O2 (8YSZ) powders were prepared by co-precipitation and used as dense diffusion barrier and solid electrolyte materials of a limiting oxygen sensor fabricated by a co-pressing and co-sintering method, respectively. The…
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Keywords:
diffusion barrier;
diffusion;
dense diffusion;
oxygen sensor ... See more keywords
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Published in 2017 at "Journal of The European Ceramic Society"
DOI: 10.1016/j.jeurceramsoc.2017.03.041
Abstract: Abstract To enable the development of next-generation solid oxide fuel cells (SOFCs), the fabrication of dense and defect-free diffusion barrier layers via constrained sintering has been a significant challenge. Here, we present a double layer…
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Keywords:
fabrication dense;
layer;
constrained sintering;
diffusion barrier ... See more keywords
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Published in 2020 at "Materials Chemistry and Physics"
DOI: 10.1016/j.matchemphys.2020.122848
Abstract: Abstract PbTe-based alloys are potential mid-temperature thermoelectric materials due to their excellent thermoelectric properties. Formation of intermetallic deteriorates mechanical joint strength and thermoelectric performance as well. In the present work, interfacial reaction, electrical and mechanical…
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Keywords:
thermoelectric materials;
addition diffusion;
diffusion barrier;
addition ... See more keywords
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Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.02.006
Abstract: For Cu interconnect in Si-based microelectronic devices, seedless electrodeposition of Cu thin films directly on Ti diffusion barrier was investigated in Cl-free, citrate (Cit)-based acidic electrolytes with polyethylene glycol (PEG) or Janus Green B (JGB)…
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Keywords:
thin films;
surface;
directly diffusion;
diffusion barrier ... See more keywords
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Published in 2018 at "Surface and Coatings Technology"
DOI: 10.1016/j.surfcoat.2018.03.037
Abstract: Abstract The duplex coating system consisted of electroplated Re-Ni as the diffusion barrier layer and the thermally sprayed NiCoCrAlY coating deposited. The adhesion strength and thermal shock resistance of the NiCoCrAlY coatings with and without…
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Keywords:
thermal shock;
diffusion barrier;
nicocraly coating;
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Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2018.03.025
Abstract: Abstract This study describes a Ta/Ti bilayer to improve the adhesion between Cu and a dielectric material and to enhance the barrier effect for Cu interconnects in electronic circuits. The addition of Ti improves the…
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Keywords:
barrier effect;
diffusion barrier;
bilayer;
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Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c14180
Abstract: To achieve high-performance thermoelectric (TE) devices, constructing good interfacial connection between TE materials and electrodes is as important as having high figure-of-merit TE materials. Although CoSb3-based TE devices have received great attention for power generation…
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Keywords:
cosb3;
cosb3 based;
diffusion barrier;
mechanical strength ... See more keywords
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Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b15562
Abstract: The size of the advanced Cu interconnects has been significantly reduced, reaching the current 7.0 nm node technology and below. With the relentless scaling-down of microelectronic devices, the advanced Cu interconnects thus requires an ultrathin…
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Keywords:
barrier;
diffusion;
layer;
amorphous carbon ... See more keywords