Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.
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DOI: 10.1021/acs.nanolett.2c01479
Abstract: The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same… read more here.
Keywords: threading dislocations; diffusion indium; quantum wells; atomic diffusion ... See more keywords