Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5124-y
Abstract: We report measurements of the minority-carrier diffusion length of n-type In0.53Ga0.47As epilayer samples using the surface photovoltage (SPV) method, and the minority-carrier lifetime of the same samples obtained by the microwave photoconductivity decay (μ-PCD) method.… read more here.
Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08176-w
Abstract: The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the intersection… read more here.
Keywords: length; ingap; cathodoluminescence study; diffusion length ... See more keywords
Boron subphthalocyanine chloride crystalline thin film with a long range exciton diffusion length grown assisted by negative surface charges
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.07.001
Abstract: Abstract Boron subphthalocyanine chloride (SubPc) crystalline thin film has been fabricated under the help of negative surface charges and its growth mechanism is discussed as well. This thin film is composed of triangular grains and… read more here.
Keywords: exciton diffusion; thin film; crystalline thin; diffusion length ... See more keywords
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC
Sign Up to like & getrecommendations! Published in 2018 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927618009698
Abstract: Gallium nitride is currently being investigated for demanding applications such as high-temperature and high-power electronics as well as space-based or other high radiation exposure applications. It has a wide bandgap and is more resistant than… read more here.
Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
Fine Tuning the Diffusion Length in Hierarchical ZSM-5 To Maximize the Yield of Propylene in Catalytic Cracking of Hydrocarbons
Sign Up to like & getrecommendations! Published in 2018 at "ACS Sustainable Chemistry & Engineering"
DOI: 10.1021/acssuschemeng.8b04441
Abstract: Direct synthesis of hierarchical zeolites using macromolecules as soft templates can yield zeolite particles with precisely controlled, ultrashort diffusion lengths, leading to the ability to tune ... read more here.
Keywords: fine tuning; diffusion; length hierarchical; diffusion length ... See more keywords
Enhanced optical path and electron diffusion length enable high-efficiency perovskite tandems
Sign Up to like & getrecommendations! Published in 2020 at "Nature Communications"
DOI: 10.1038/s41467-020-15077-3
Abstract: Tandem solar cells involving metal-halide perovskite subcells offer routes to power conversion efficiencies (PCEs) that exceed the single-junction limit; however, reported PCE values for tandems have so far lain below their potential due to inefficient… read more here.
Keywords: length; diffusion length; efficiency; electron diffusion ... See more keywords
2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids
Sign Up to like & getrecommendations! Published in 2018 at "Nature Nanotechnology"
DOI: 10.1038/s41565-018-0117-z
Abstract: Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication… read more here.
Keywords: engineering; quantum; matrix engineering; engineering homogeneous ... See more keywords
Triplet excitons: improving exciton diffusion length for enhanced organic photovoltaics
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Chemistry A"
DOI: 10.1039/c8ta10037c
Abstract: Organic materials containing heavy atoms have been used in photovoltaics to overcome a fundamental limitation: short exciton diffusion length (LD). We highlight studies showing increased LD in solar cells using triplet-generating materials and tackle challenges… read more here.
Keywords: diffusion length; triplet excitons; exciton diffusion;
Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2020.1076
Abstract: The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusion-limited behaviour at 80 K,… read more here.
Keywords: superlattice detectors; diffusion; inas gasb; gasb superlattice ... See more keywords
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.5006814
Abstract: Inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality,… read more here.
Keywords: heteroepitaxial gan; irradiation; carrier; diffusion length ... See more keywords
Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5030444
Abstract: The minority carrier diffusion length was directly measured by the variable-temperature Electron Beam-Induced Current technique in InAs/GaSb type-II strain-layer-superlattice infrared-detector structures. The Molecular Beam Epitaxy-grown midwave infrared superlattices comprised 10 monolayers of InAs and 10… read more here.
Keywords: minority; diffusion; inas gasb; diffusion length ... See more keywords