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Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400558
Abstract: Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal…
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Keywords:
molybdenum interconnects;
plasma oxidation;
metal;
digital etching ... See more keywords
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Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac32a6
Abstract: We established an oxygen-based digital etching technique to fabricate the recessed gate structure for RF GaN HEMT. The digital etching rates were 2.5 nm cycle–1 and 0.5 nm cycle–1 with 40 W RF bias and…
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Keywords:
digital etching;
control enhancement;
oxygen based;
gan hemt ... See more keywords