Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6325-3
Abstract: The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and… read more here.
Keywords: distribution measured; characterization dilute; grown sample; cathodoluminescence ... See more keywords
Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient
Sign Up to like & getrecommendations! Published in 2018 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2018.05.043
Abstract: Abstract In this work, lattice-matched 3-junction and 4-junction solar cells including the dilute nitride subcells were fabricated by a hybrid growth technique of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). It was… read more here.
Keywords: grown dilute; hydrogen; mbe grown; gainnassb ... See more keywords
Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab0974
Abstract: We report the growth of dilute nitride GaNAs and GaInNAs core-multishell nanowires (NWs) using molecular beam epitaxy assisted by a plasma source. Using the self-catalyst vapor-liquid-solid growth mode, these NWs were grown on Si(111) and… read more here.
Keywords: ganas gainnas; molecular beam; growth dilute; nitride ganas ... See more keywords