Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149458
Abstract: Abstract The doping effects on the electronic states of two-dimensional Ga2O3 are investigated by first-principle calculations. Substitutional Si, Ge or Sn atom at Ga sites results in donor doping behavior, while Mg, Ca or Sr… read more here.
Keywords: bandgap; dimensional ga2o3; indirect direct; direct bandgap ... See more keywords
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4979028
Abstract: We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its… read more here.
Keywords: exfoliated quasi; quasi two; ga2o3; ga2o3 flakes ... See more keywords