Intriguing electronic structures and carrier mobilities of two-dimensional GaN nanosheets: Thickness and surface effects
Sign Up to like & getrecommendations! Published in 2020 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2019.109337
Abstract: Abstract Two-dimensional GaN nanosheets have emerged as a promising candidate material for the application of low-dimensional optoelectronic devices, but their fundamental electronic structure and intrinsic carrier mobility are extremely sensitive to the phase structure and… read more here.
Keywords: carrier mobilities; surface; two dimensional; gan nanosheets ... See more keywords
Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.
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DOI: 10.1021/acs.nanolett.7b03003
Abstract: Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting… read more here.
Keywords: light emission; optical properties; electronic optical; two dimensional ... See more keywords