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Published in 2021 at "Nature Materials"
DOI: 10.1038/s41563-021-01074-4
Abstract: A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore non-trivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gases have…
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Keywords:
hole gas;
dimensional hole;
organic semiconductors;
gas ... See more keywords
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Published in 2019 at "Low Temperature Physics"
DOI: 10.1063/10.0000122
Abstract: Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties -- such as…
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Keywords:
diamond surfaces;
dimensional hole;
two dimensional;
review ... See more keywords
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Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0208784
Abstract: Magnetoresistance (MR) of two-dimensional hole gas (2DHG) samples fabricated from GaN/AlxGa1-xN/GaN (x = 0.2–0.25) double heterostructures has been investigated to reveal subband electronic parameters and low field spin splitting properties. In sample with high sheet hole density…
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Keywords:
hole;
analysis;
dimensional hole;
two dimensional ... See more keywords
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Published in 2022 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/aca61c
Abstract: Diamond is a wide bandgap semiconductor (bandgap: 5.5 eV). However, through impurity doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p-type semiconductor diamond is less than 10−3 Ω cm, which…
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Keywords:
high frequency;
dimensional hole;
hole gas;
two dimensional ... See more keywords
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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa6067
Abstract: GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying…
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Keywords:
towards low;
hole systems;
low dimensional;
systems doped ... See more keywords
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Published in 2025 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ae0397
Abstract: Polarization-induced two-dimensional hole gases (2DHG) in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors. This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD…
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Keywords:
hole gases;
dimensional hole;
two dimensional;
gan thickness ... See more keywords