Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers
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DOI: 10.1063/5.0022557
Abstract: We describe a technique for fabricating one-dimensional Ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved… read more here.
Keywords: graphene layers; ohmic contacts; graphene; one dimensional ... See more keywords