Topological Insulator in Two-Dimensional SiGe Induced by Biaxial Tensile Strain
Sign Up to like & getrecommendations! Published in 2018 at "ACS Omega"
DOI: 10.1021/acsomega.7b01957
Abstract: Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains… read more here.
Keywords: sige; two dimensional; dimensional sige; tensile ... See more keywords
Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.1.073602
Abstract: We present a joint theoretical and experimental analysis of the dislocation distribution in graded epitaxial SiGe crystals grown on under-etched Si pillars by low-energy plasma-enhanced chemical vapor deposition. Dislocation dynamics simulations are used to investigate… read more here.
Keywords: three dimensional; sige heterostructures; dislocation; sige ... See more keywords