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Published in 2019 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1669036
Abstract: ABSTRACT The carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional…
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Keywords:
sub threshold;
nano nmosfet;
strained nano;
dimensional sub ... See more keywords