Dimer-vacancy defects on Si(1 0 0): The role of nickel impurity
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DOI: 10.1016/j.apsusc.2019.144647
Abstract: Abstract Using scanning tunneling microscopy, x-ray photoelectron spectroscopy, and low-energy electron diffraction, we have studied clean and Ni-containing Si(1 0 0) surfaces and shown that the Ni contamination can easily appear at the Si(1 0 0) during its annealing… read more here.
Keywords: vacancy defects; defects role; impurity; dimer vacancy ... See more keywords