Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
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DOI: 10.1002/aelm.201600491
Abstract: Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is… read more here.
Keywords: dimethylaluminum chloride; layer; surface; surface passivation ... See more keywords