Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water.
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DOI: 10.1039/c6dt02572b
Abstract: To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02… read more here.
Keywords: dimethylamino propoxide; oxide films; atomic layer; layer deposition ... See more keywords