Band and Impurity States in Dimond with the (MV)– (M = Si, Ge, Sn) Centers Based on ab Initio Calculations
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DOI: 10.1134/s1063776118120208
Abstract: Ab initio calculations were used to determine the structure, electronic zone dispersion, partial (atomic and orbital) densities of states, and levels of impurity–vacancy cluster (MV)– (M = Si, Ge, Sn) in diamond. Wavefunctions were determined… read more here.
Keywords: impurity states; band impurity; dimond centers; states dimond ... See more keywords