Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD
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DOI: 10.3390/ma15238280
Abstract: In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The… read more here.
Keywords: diode; diode heterojunction; schottky barrier; heterojunction diode ... See more keywords