Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN
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DOI: 10.1088/1361-6641/aa7247
Abstract: We report growth, fabrication, and device results of MoS2-based transistors and diodes implemented on a single 2D/3D material platform. The 2D/3D platform consists of a large-area MoS2 thin film grown on SiO2/p-GaN substrates. Atomic force… read more here.
Keywords: microscopy; enabled large; mos2; transistors tunnel ... See more keywords