High voltage GaN p‐n diodes formed by selective area regrowth
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DOI: 10.1049/el.2019.3587
Abstract: GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a… read more here.
Keywords: regrowth; selective area; area; gan diodes ... See more keywords
Electrical characterization of RuOx/n-GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air
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DOI: 10.1063/1.5125784
Abstract: Schottky diodes were formed by oxidizing Ru thin films deposited on n-type GaN at 400, 500, and 600 °C in normal laboratory air, and their electrical behavior was compared to that of a Ru/n-GaN reference… read more here.
Keywords: thin films; schottky diodes; formed oxidizing; diodes formed ... See more keywords