Modeling and Evaluation of Stacking Fault Expansion Velocity in Body Diodes of 3.3 kV SiC MOSFET
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DOI: 10.1007/s11664-018-06901-0
Abstract: We evaluated the stacking fault (SF) expansion velocity by electrical characteristics and estimated the screening test condition, which is a stress test with current to eliminate 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) whose forward voltage… read more here.
Keywords: body diodes; expansion velocity; diodes sic; expansion ... See more keywords