Pressure‐Induced Indirect‐Direct Bandgap Transition of CsPbBr3 Single Crystal and Its Effect on Photoluminescence Quantum Yield
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202201554
Abstract: Despite extensive study, the bandgap characteristics of lead halide perovskites are not well understood. Usually, these materials are considered as direct bandgap semiconductors, while their photoluminescence quantum yield (PLQY) is very low in the solid… read more here.
Keywords: direct bandgap; bandgap; quantum yield; pressure ... See more keywords
Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149458
Abstract: Abstract The doping effects on the electronic states of two-dimensional Ga2O3 are investigated by first-principle calculations. Substitutional Si, Ge or Sn atom at Ga sites results in donor doping behavior, while Mg, Ca or Sr… read more here.
Keywords: bandgap; dimensional ga2o3; indirect direct; direct bandgap ... See more keywords
A superhard sp 3 microporous carbon with direct bandgap
Sign Up to like & getrecommendations! Published in 2017 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2017.10.014
Abstract: Abstract Carbon allotropes with distinct sp , sp 2 , and sp 3 hybridization possess various different properties. Here, a novel all- sp 3 hybridized tetragonal carbon, namely the P carbon, was predicted by the… read more here.
Keywords: carbon; superhard microporous; carbon direct; direct bandgap ... See more keywords
Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.02.038
Abstract: Abstract In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in Г-and L-valley. The practically exploitable… read more here.
Keywords: gesn quantum; direct bandgap; emission wavelength; interband intraband ... See more keywords
Tailorable Indirect to Direct Bandgap Double Perovskites with Bright White-Light Emission: Decoding Chemical Structure using Solid-State NMR.
Sign Up to like & getrecommendations! Published in 2020 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.0c02198
Abstract: Efficient white-light emitting single-material sources are ideal for sustainable lighting applications. Though layered hybrid lead-halide perovskite materials have demonstrated attractive broadband white-light emission properties, they pose a serious long-term environmental and health risk as they… read more here.
Keywords: indirect direct; light emission; direct bandgap; light ... See more keywords
A Direct Bandgap Copper-Antimony Halide Perovskite.
Sign Up to like & getrecommendations! Published in 2017 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.7b04119
Abstract: Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory… read more here.
Keywords: direct bandgap; copper antimony; antimony halide; bandgap copper ... See more keywords
Designing Indirect-Direct Bandgap Transitions in Double Perovskites
Sign Up to like & getrecommendations! Published in 2017 at "Materials horizons"
DOI: 10.1039/c7mh00239d
Abstract: A general design strategy is presented for tuning the convergence of direct and indirect bandgaps based on chemical adjustment of the s- and p-orbital character of the conduction band minimum. To demonstrate the viability of… read more here.
Keywords: bandgap; bandgap transitions; indirect direct; direct bandgap ... See more keywords
Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5048777
Abstract: The germanium-tin (Ge-Sn) alloy has been considered a candidate for applications in Short Wave Infrared optical electronics, because it has the property of transforming pure germanium (Ge), typically an indirect bandgap material, into a direct… read more here.
Keywords: bandgap; potential energy; alloy; effects volumetric ... See more keywords
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aadfaa
Abstract: The GeSn-based quantum wells (QWs) have been investigated recently for the development of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well with type-I band alignment was achieved, the demonstrated QW… read more here.
Keywords: gesn; carrier confinement; direct bandgap; study ... See more keywords
Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9chain structures.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abc6de
Abstract: True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be… read more here.
Keywords: bandgap; dangling bond; direct bandgap; interchain distance ... See more keywords
Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
Sign Up to like & getrecommendations! Published in 2019 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.75.577
Abstract: The temperature (T)-dependent photoluminescence (PL) from Ge1−ySny (y = 4.3%–9.0%) alloys grown on Ge-buffered Si substrates was studied as a function of the Sn content. The PL from Ge1−ySny alloys with high Sn contents (≥7.0%)… read more here.
Keywords: bandgap; direct bandgap; temperature dependent; dependent photoluminescence ... See more keywords