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Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.8b08726
Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductors that feature a strong variation of their band gap as a function of the number of layers…
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Keywords:
gap;
inse;
direct gap;
two dimensional ... See more keywords
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Published in 2018 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226918090103
Abstract: A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of avalanche photodiodes with separate absorption and multiplication regions…
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Keywords:
direct gap;
based direct;
heterostructure based;
avalanche photodiodes ... See more keywords