Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer
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DOI: 10.1016/j.sse.2018.07.008
Abstract: Abstract We determined characteristics of internal gettering of copper in the vertical direction of p-type silicon wafer. Bulk micro-defects (BMDs) caused by oxygen precipitation and the gettering efficiency of Cu along the vertical direction from… read more here.
Keywords: direction; direction type; microscopy; vertical direction ... See more keywords