Applying sputtering theory to directional atomic layer etching
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DOI: 10.1116/1.5003393
Abstract: Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation of ALE is called directional ALE because ions transfer momentum to the etching surface during the removal… read more here.
Keywords: layer; atomic layer; sputtering theory; directional ale ... See more keywords