Kinetic study of the hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO2/Si substrate.
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DOI: 10.1088/1361-6528/ab5ce5
Abstract: Hybrid integration of III-V materials onto silicon by direct bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the Silicon Photonics Platform (SPP). In this approach, the… read more here.
Keywords: hydrogen; kinetic study; high temperature; directly bonded ... See more keywords