Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5063420
Abstract: P-type doping using Mg is essential for realizing a variety of electronic and optoelectronic III-nitride devices involving hetero-epitaxial thin films that also contain a significant number of dislocations. We report on the effect of Mg… read more here.
Keywords: dislocation bending; dislocation; stress evolution; effect ... See more keywords
Research of Dislocation and Bending Angle Effects on EDS Dynamic Characteristics Based on Real-Time Coupling Calculation Method
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Transportation Electrification"
DOI: 10.1109/tte.2025.3593777
Abstract: There are notable differences between electrodynamic suspension (EDS) and wheel–rail systems, making existing wheel–rail irregularity research inapplicable to EDS. This study examines the correlation between deterministic irregularities, such as dislocation and bending angles, and dynamic… read more here.
Keywords: bending angle; dynamic characteristics; type; dislocation ... See more keywords