Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
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DOI: 10.1063/1.5063420
Abstract: P-type doping using Mg is essential for realizing a variety of electronic and optoelectronic III-nitride devices involving hetero-epitaxial thin films that also contain a significant number of dislocations. We report on the effect of Mg… read more here.
Keywords: dislocation bending; dislocation; stress evolution; effect ... See more keywords