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Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2942218
Abstract: The detection of dislocation defects in polysilicon wafers helps to improve the power generation efficiency and service life of solar cells. However, dislocation defect detection is challenging due to similarity of morphology and intensity between…
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Keywords:
region;
dislocation defects;
dislocation;
background ... See more keywords
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Published in 2025 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2025.3546964
Abstract: Gallium nitride (GaN) high electron mobility transistor (HEMT) devices are prone to rapid failure after repetitive short-circuit (SC) stress under high bus voltage conditions. The dislocation defects at the substrate interface play a critical role…
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Keywords:
transient thermal;
stress;
dislocation defects;
dislocation ... See more keywords