Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.01.044
Abstract: Abstract Uniform strain relaxation and defect densities across the entire wafer are important aspects of lattice-mismatched or metamorphic epitaxy of semiconductors. Achieving this requires an understanding of the sources of dislocations that lead to relaxation.… read more here.
Keywords: sources wafer; dislocation; ingaas graded; dislocation sources ... See more keywords
Nanoscale precipitates as sustainable dislocation sources for enhanced ductility and high strength
Sign Up to like & getrecommendations! Published in 2020 at "Proceedings of the National Academy of Sciences of the United States of America"
DOI: 10.1073/pnas.1914615117
Abstract: Significance Precipitates in a material are traditionally thought of as dislocation obstacles that lead to elevated strength and reduced ductility. In contrast, recent experiments suggest that nanoscale precipitates facilitate both high strength and large ductility.… read more here.
Keywords: strength; high strength; dislocation; nanoscale precipitates ... See more keywords