InP quantum dots for dislocation-tolerant, visible light emitters on Si
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DOI: 10.1063/5.0030102
Abstract: Quantum dots (QDs) epitaxially grown on Si are promising for monolithic integration of light sources on a Si photonics platform. Unlike quantum well (QW) lasers on Si, 1.3 μm InAs QD lasers on Si show similar… read more here.
Keywords: dislocation; light emitters; qds; dislocation tolerant ... See more keywords