Annealing effect on threading dislocations in a GaN grown on Si substrate
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.001
Abstract: Abstract Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that… read more here.
Keywords: annealing effect; effect; dislocations gan; effect threading ... See more keywords
Recombination properties of dislocations in GaN
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4995580
Abstract: The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation… read more here.
Keywords: dislocation; dislocations gan; properties dislocations; recombination ... See more keywords
Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.031004
Abstract: The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 µm… read more here.
Keywords: three dimensional; imaging threading; dislocations gan; using two ... See more keywords