Carrier localization in the vicinity of dislocations in InGaN
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DOI: 10.1063/1.4973278
Abstract: We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological… read more here.
Keywords: dislocations ingan; microscopy; dislocation; carrier localization ... See more keywords