β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0179556
Abstract: One of the most interesting wide-bandgap semiconductor is 4H-SiC that has an indirect wide-bandgap of 3.3 eV. This material holds great potential to develop power devices that find applications in the field of high-voltage and high-temperature… read more here.
Keywords: damage epitaxial; displacement damage; induced displacement; rays induced ... See more keywords
Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2666147
Abstract: Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 \times 10^{13}$ n/cm2.… read more here.
Keywords: cbram cells; resistance state; displacement damage; resistance ... See more keywords
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2749180
Abstract: The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to… read more here.
Keywords: displacement damage; silicon based; damage total; total ionizing ... See more keywords
Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2790843
Abstract: A first principle study of the defects generated by displacement cascades in silicon is performed. This paper is particularly focused on two defect configurations; the divacancy and the tri-interstitial, both identified in previous molecular dynamics… read more here.
Keywords: first principle; displacement damage; particle displacement; damage silicon ... See more keywords
Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2020.2971646
Abstract: The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which forms an extracting path for… read more here.
Keywords: mos controlled; controlled thyristor; anode short; displacement damage ... See more keywords
Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3071171
Abstract: We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers… read more here.
Keywords: damage; single photon; photon avalanche; displacement damage ... See more keywords
Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3072886
Abstract: Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These… read more here.
Keywords: state current; heavy ion; ionizing dose; ion ... See more keywords
Displacement Damage and Total Ionizing Dose Induced by 3-MeV Protons in SiC Vertical Power MOSFETs
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2024.3505058
Abstract: The radiation effects in SiC power MOSFETs induced by 3-MeV protons at high fluence are evaluated. Significant parametric shifts are observed due to displacement damage (DD) and total ionizing dose (TID) depending on the bias… read more here.
Keywords: damage total; displacement damage; power mosfets; mev protons ... See more keywords
Displacement Damage-Induced Dark Current and Random Telegraph Signal in p-Type Deep-Trench Pinned Photogates
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2024.3512775
Abstract: This study focuses on the displacement damage-induced dark current and random telegraph signal (RTS) in the STMicroelectronics p-type photogate, a device moving away from the 4T pinned-photodiode (PPD), with a sensitive volume exclusively made of… read more here.
Keywords: displacement damage; dark current; damage induced; random telegraph ... See more keywords
Calibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation Environment
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2025.3549051
Abstract: This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are based on the forward voltage shift… read more here.
Keywords: mev; inline formula; displacement damage; response ... See more keywords
Synergistic Mechanisms of Ionizing/Displacement Damage in Silicon BJTs: Review and Prospects
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2025.3600414
Abstract: The combined influence of ionization and displacement phenomena within the space radiation environment has spurred considerable investigation into the synergistic impacts of ionization and displacement damage on bipolar transistors. Prior research has largely concentrated on… read more here.
Keywords: damage silicon; ionizing displacement; displacement damage; damage ... See more keywords