Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
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DOI: 10.1109/tns.2017.2666147
Abstract: Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 \times 10^{13}$ n/cm2.… read more here.
Keywords: cbram cells; resistance state; displacement damage; resistance ... See more keywords
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2749180
Abstract: The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to… read more here.
Keywords: displacement damage; silicon based; damage total; total ionizing ... See more keywords
Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2790843
Abstract: A first principle study of the defects generated by displacement cascades in silicon is performed. This paper is particularly focused on two defect configurations; the divacancy and the tri-interstitial, both identified in previous molecular dynamics… read more here.
Keywords: first principle; displacement damage; particle displacement; damage silicon ... See more keywords
Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor
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DOI: 10.1109/tns.2020.2971646
Abstract: The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which forms an extracting path for… read more here.
Keywords: mos controlled; controlled thyristor; anode short; displacement damage ... See more keywords
Displacement Damage Characterization of CMOS Single-Photon Avalanche Diodes: Alpha-Particle and Fast-Neutron Measurements
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DOI: 10.1109/tns.2021.3071171
Abstract: We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers… read more here.
Keywords: damage; single photon; photon avalanche; displacement damage ... See more keywords
Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3072886
Abstract: Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These… read more here.
Keywords: state current; heavy ion; ionizing dose; ion ... See more keywords
Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field
Sign Up to like & getrecommendations! Published in 2022 at "PLOS ONE"
DOI: 10.1371/journal.pone.0276364
Abstract: The displacement damage dose (DDD) is a common index used to predict the life of semiconductor devices employed in space-based environments where they will be exposed to radiation. The DDD is commonly estimated from the… read more here.
Keywords: ddd; displacement damage; space; calculating effective ... See more keywords