The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors
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DOI: 10.1109/ted.2020.3022004
Abstract: The impact of a single displacement defect on the performance of tunneling field-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point… read more here.
Keywords: effect transistors; single displacement; impact single; field effect ... See more keywords
Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
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DOI: 10.3390/mi13060901
Abstract: The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as… read more here.
Keywords: defect; field effect; defect sic; displacement defect ... See more keywords