Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth
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DOI: 10.1016/j.jcrysgro.2019.125462
Abstract: Abstract Reducing the thermal stress induced in GaN crystals is key for the fabrication of large-diameter GaN crystals. In the Na-flux method, thermal stress is eliminated by sapphire dissolution at growth temperature after growth. We… read more here.
Keywords: dissolution; sapphire; freestanding gan; dissolution sapphire ... See more keywords