Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.
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DOI: 10.1021/acs.nanolett.7b04603
Abstract: Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor… read more here.
Keywords: elastic distortions; distortions gaas; gaas quantum; quantum dot ... See more keywords