Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
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DOI: 10.1109/led.2024.3467210
Abstract: We study the disturb characteristics of ferroelectric field-effect transistors (FEFETs) with band-engineered gate stacks. We demonstrate that integrating a dielectric Al2O3 layer within the ferroelectric (FE) Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 layer in the gate… read more here.
Keywords: memory window; memory; ferroelectric field; disturb ... See more keywords