Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read.
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DOI: 10.1039/d1nr05107e
Abstract: Ferroelectric field-effect transistors (FeFETs) with a single gate structure and using the newly discovered ferroelectric hafnium oxide as an active material are attracting considerable interest for nonvolatile memory devices. However, such FeFETs struggle to achieve… read more here.
Keywords: memory window; double gate; free read; disturb free ... See more keywords