C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
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DOI: 10.1016/j.physe.2018.07.035
Abstract: Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The… read more here.
Keywords: interface defects; dlts interface; gan hemts; 22ga0 78n ... See more keywords