Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET
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DOI: 10.1007/s12633-020-00859-7
Abstract: TFET is very favourable device than MOSFET in terms of low power design and applications. The accurate fabrication of device results in satisfactory electrical characteristics. The diffusion of source/drain regions through the ion implantation technique,… read more here.
Keywords: dmdg tfet; linearity; source; lateral straggle ... See more keywords