Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
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DOI: 10.3390/app10010126
Abstract: In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT)… read more here.
Keywords: dmmg hjltfet; gate; material gate; performance ... See more keywords