Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp
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DOI: 10.3390/nano15030172
Abstract: An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device… read more here.
Keywords: integrated quasi; ron; dmos; quasi vertical ... See more keywords