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Published in 2018 at "Defect and Diffusion Forum"
DOI: 10.4028/www.scientific.net/ddf.386.38
Abstract: Sb-doped β-FeSi2 epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi2. After an optimization of donor activation conditions in the Sb-doped β-FeSi2, the electron density of 6…
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Keywords:
fesi2 epitaxial;
doped fesi2;
epitaxial films;
activation conditions ... See more keywords