Donor impurity incorporation during layer growth of Zn II-VI semiconductors
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.09.012
Abstract: Abstract The maximum halogen donor concentration in Zn II-VI semiconductors during layer growth is studied using a standard model from statistical mechanics. Here the driving force for incorporation is an increase in entropy upon mixing… read more here.
Keywords: concentration; donor concentration; donor impurity; layer growth ... See more keywords
Control of Donor Concentration in n-Type Buffer Layer for High-Efficiency Cu(In,Ga)Se 2 Solar Cells
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2018.2865170
Abstract: To improve the conversion efficiency of Cu(In,Ga)Se2 (CIGS) solar cells, we clarified the correlation between the recombination at CdS/CIGS interface and donor concentration in a CdS buffer layer, and propose a technique to control the… read more here.
Keywords: control donor; buffer layer; donor concentration; concentration ... See more keywords