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Published in 2018 at "Russian Physics Journal"
DOI: 10.1007/s11182-018-1278-9
Abstract: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) CdxHg1–xTe (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission…
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Keywords:
implanted structures;
structures based;
based mbe;
arsenic implanted ... See more keywords