Low-current transport through dopant atom-based quantum dots in a nanoscale silicon transistor
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DOI: 10.1063/5.0293627
Abstract: Quantum dot (QD) single-electron transistors, using phosphorous dopant atom QDs with radii as small as ∼1.2 nm, are electrically characterized down to the ∼100 fA level and over a wide temperature range, from room-temperature (RT = 300 K) to 8 K.… read more here.
Keywords: dopant atom; transport; atom; low current ... See more keywords