Three-dimensional analysis of Eu dopant atoms in Ca-α-SiAlON via through-focus HAADF-STEM imaging.
Sign Up to like & getrecommendations! Published in 2017 at "Ultramicroscopy"
DOI: 10.1016/j.ultramic.2017.01.014
Abstract: Three-dimensional (3D) distributional analysis of individual dopant atoms in materials is important to development of optical, electronic, and magnetic materials. In this study, we adopted through-focus high-angle annular dark-field (HAADF) imaging for 3D distributional analysis… read more here.
Keywords: three dimensional; haadf; dopant atoms; dopant ... See more keywords
Resistivity control by the electrochemical removal of dopant atoms from a nanodot.
Sign Up to like & getrecommendations! Published in 2019 at "Faraday discussions"
DOI: 10.1039/c8fd00099a
Abstract: Doping impurity atoms into semiconductor materials changes the resistance of the material. Selecting the atomic species of a dopant and the precise control of the number of dopant atoms in a unit volume can control… read more here.
Keywords: number dopant; dopant; control; removal dopant ... See more keywords