Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400751
Abstract: Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing… read more here.
Keywords: sio2 interface; dopant diffusion; center defects; interface ... See more keywords
Direct observation of substitutional and interstitial dopant diffusion in oxide grain boundary
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DOI: 10.1038/s41467-025-64798-w
Abstract: Grain boundaries (GBs) serve as fast diffusion paths for dopant atoms, and the segregated dopants can significantly alter the materials’ properties. However, the exact mechanism of fast dopant diffusion along the GBs, particularly at atomic… read more here.
Keywords: dopant diffusion; direct observation; diffusion; grain boundary ... See more keywords